Elixir M2N2G64CB8HA5N-CG Ficha de datos descargar pdf

M2N1G64CBH8A5P / M2N2G64CB8HA5N

1GB: 128M x 64 / 2GB: 256M x 64

Unbuffered DDR3 SO-DIMM

REV1.1 1

04/2009

NANYA reserves the right to change products and specifications without notice.

Based on 64Mx16 (1GB) / 128Mx8 (2GB) DDR3 SDRAM A-Die

Features

•Performance:

Speed Sort

PC3-8500

PC3-10660

Unit

-BE

-CG

DIMM CAS Latency

fck – Clock Freqency

533

667

MHz

tck – Clock Cycle

1.875

1.5

fDQ – DQ Burst Freqency

1066

1333

Mbps

• 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

• 1GB: 128Mx64 Unbuffered DDR3 SO-DIMM based on 64Mx16

DDR3 SDRAM A-Die devices.

• 2GB: 256Mx64 Unbuffered DDR3 SO-DIMM based on 128Mx8

DDR3 SDRAM A-Die devices.

• Intended for 533MHz/667MHz/800MHz applications

• Inputs and outputs are SSTL-15 compatible

• V

= V

DDQ

= 1.5V ±0.075V

• SDRAMs have 8 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

clock edge

• Programmable Operation:

- DIMM  Latency: 5,6,7,8,9,10

- Burst Type: Sequential or Interleave

- Burst Length: BC4, BL8

- Operation: Burst Read and Write

• Two different termination values (Rtt_Nom & Rtt_WR)

• 13/10/2 (row/column/rank) Addressing for 1GB

• 14/10/2 (row/column/rank) Addressing for 2GB

• Extended operating temperature rage

• Auto Self-Refresh option

• Serial Presence Detect

• Gold contacts

• 1GB: SDRAMs are in 96-ball BGA Package

• 2GB: SDRAMs are in 78-ball BGA Package

• RoHS compliance

Description

M2N1G64CBH8A5P and M2N2G64CB8HA5N are unbuffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline

Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB) and 256Mx64 (2GB) high-speed memory array.

Modules use eight 64Mx16 (1GB) 96-ball BGA packaged devices and sixteen 128Mx8 (2GB) 78-ball BGA packaged devices. These DIMMs

are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes

electrical variation between suppliers. All Elixir DDR3 SODIMMs provide a high-performance, flexible 8-byte interface in a space-saving

footprint.

The DIMM is intended for use in applications operating of 533MHz/667MHz/800MHz clock speeds and achieves high-speed data transfer

rates of 1066Mbps/1333Mbps/1600Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be

programmed into the DIMM by address inputs A0-A12 (1GB)/A0-A13 (2GB) and I/O inputs BA0~BA2 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data

are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

1 2 3 4 5 6 ... 18 19

Indice de contenidos

Pagina 1

M2N1G64CBH8A5P / M2N2G64CB8HA5N 1GB: 128M x 64 / 2GB: 256M x 64 Unbuffered DDR3 SO-DIMM REV1.1 1 04/20

Pagina 2

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Pagina 3 - REV1.1 3

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Pagina 4 - , , 

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Pagina 5 - Functional Block Diagram

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Pagina 6 - REV1.1 6

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Pagina 7 - Part 1 of 2 (1GB)

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Pagina 8 - Part 2 of 2 (1GB)

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Pagina 9 - Part 1 of 2 (2GB)

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Pagina 10 - REV1.1 10

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Pagina 11

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Pagina 12

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Pagina 13

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Pagina 14 - REV1.1 14

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Pagina 15 - REV1.1 15

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Pagina 16 - REV1.1 16

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Pagina 17 - Units: Millimeters (Inches)

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Pagina 18

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Pagina 19 - Nanya Technology Corporation

M2N1G64CBH8A5P / M2N2G64CB8HA5N 1GB: 128M x 64 / 2GB: 256M x 64 Unbuffered DDR3 SO-DIMM REV1.1 9 04/20

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