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M2F2G64CB88B7N / M2F4G64CB8HB5N

M2F2G64CB88BHN / M2F4G64CB8HB9N

2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-12800

Unbuffered DDR3 SDRAM DIMM

REV 1.1 8

10/2010

NANYA reserves the right to change products and specifications without notice.

Serial Presence Detect [M2F4G64CB8HB5N / M2F4G64CB8HB9N , 4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]

Byte

Description

Serial PD Data Entry (Hex.)

-BE

-CG

-DG

CRC range, EEPROM bytes, bytes used

SPD revision

DRAM device type

Module type (form factor)

SDRAM Device density and banks

SDRAM device row and column count

Module minimum nominal voltage

Module ranks and device DQ count

ECC tag and module memory Bus width

Fine timebase dividend/divisor (in ps)

Medium timebase dividend

Medium timebase divisor

Minimum SDRAM cycle time (tCKmin)

Reserved

CAS latencies supported

Minimum CAS latency time (tAAmin)

Minimum write recovery time (tWRmin)

Minimum CAS-to-CAS delay (tRCDmin)

Minimum Row Active to Row Active delay (tRRDmin)

Minimum row Precharge delay (tRPmin)

Upper nibble for tRAS and tRC

Minimum Active-to-Precharge delay (tRASmin)

Minimum Active-to-Active/Refresh delay (tRCmin)

Minimum refresh recovery delay (tRFCmin) LSB

Minimum refresh recovery delay (tRFCmin) MSB

Minimum internal Write-to-Read command delay (tWTRmin)

Minimum internal Read-to-Precharge command delay (tRTPmin)

Minimum four active window delay (tFAWmin) LSB

Minimum four active window delay (tFAWmin) MSB

SDRAM device output drivers supported

SDRAM device thermal and refresh options

Module Thermal Sensor

SDRAM Device Type

Module height (nominal)

Module thickness (Max)

Raw Card ID reference

DRAM address mapping edge connector

117

Module manufacture ID

118

Module manufacture ID

119-121

Module manufacturer Information

126

CRC

127

CRC

128-145

Module part number

146

Module die revision

147

Module PCB revision

150-175

Manufacturer reserved

176-255

Intel Extreme Memory Profile(XMP)

1 2 3 4 5 6 7 8 9 10 11 12 13 ... 26 27

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