
M2Y51H64TU88D0B / M2Y51H64TU88D6B / M2Y1GH64TU8HD0B / M2Y1GH64TU8HD6B
512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM Preliminary Edition
REV 0.1 14
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
AC Timing Specifications for DDR2 SDRAM Devices Used on Module
(T
CASE
= 0 °C ~ 85 °C; V
DDQ
= 1.8V ± 0.1V; V
DD
= 1.8V ± 0.1V, See AC Characteristics) (Part 1 of 2)
DQ output access time from CK/
DQS output access time from CK/
Minimum half clk period for any given cycle;
defined by clk high (tCH) or clk low (tCL) time
DQ and DM input setup time(differential data
strobe)
DQ and DM input hold time(differential data strobe)
DQ and DM input pulse width (each input)
Data-out high-impedance time from CK/
DQS low-impedance time from CK/
DQ low-impedance time from CK/
DQS-DQ skew (DQS & associated DQ signals)
Data output hold time from DQS
Write command to 1st DQS latching transition
DQS input low (high) pulse width
(write cycle)
DQS falling edge to CK setup time
(write cycle)
DQS falling edge hold time from CK
(write cycle)
Mode register set command cycle time
Address and control input hold time
Address and control input setup time
Active bank A to Active bank B command
Minimum time clocks remains ON after CKE
asynchronously drops Low
Average Periodic Refresh Interval
(85ºC < T
CASE
≤ 95ºC)
Average Periodic Refresh Interval
(0ºC ≤ T
CASE
≤ 85ºC)
OCD drive mode output delay
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