
M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B
1GB: 128M x 64 / 2GB: 256M x 64
PC2-5300 / PC2-6400
Unbuffered DDR2 SO-DIMM
REV 1.0 15
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR2 SDRAM Devices Used on Module
(T
CASE
= 0 °C ~ 85 °C; V
DDQ
= 1.8V ± 0.1V; V
DD
= 1.8V ± 0.1V, See AC Characteristics) (Part 1 of 2)
DQ output access time from CK/
DQS output access time from CK/
Minimum half clk period for any given cycle; defined by clk high
(t
CH
) or clk low (t
CL
) time
DQ and DM input hold time
DQ and DM input setup time
DQ and DM input pulse width (each input)
Data-out high-impedance time from CK/
Data-out low-impedance time from CK/
DQS low-impedance time from CK/
DQS-DQ skew (DQS & associated DQ signals)
Data output hold time from DQS
Write command to 1
st
DQS latching transition
DQS input high pulse width
DQS input low pulse width
DQS falling edge to CK setup time
(write cycle)
DQS falling edge hold time from CK
(write cycle)
Mode register set command cycle time
Address and control input hold time
Address and control input setup time
Minimum time clocks remains ON after CKE asynchronously
drops Low
Refresh to active/Refresh command time
Average Periodic Refresh Interval
(85ºC < T
CASE
≤ 95ºC)
Average Periodic Refresh Interval
(0ºC ≤ T
CASE
≤ 85ºC)
Comentarios a estos manuales